“Mathematical Analysis For Heterostructured Leds”

Abstract: In this paper I report on an experimental comparison between InAsSbP-InAs-InAsSbP Double Heterostructure direct and InAsSbP-InAs-InAs single Heterostructure LED.I present a mathematical analysis for visual o/p index finger, quantum efficiency and index bandwidth analysis for twain DH-LED and SH-LED. In my project I will present an uninflected fabric for SH-LED. On the basis of my study I perish near reasons for low opthalmic o/p power in the case of DH-LED and give whatsoever solutions to improve optical o/p power. After this study we will habituate InAsSbP-InAs-InAsSbP LED as nano LEDs which can emmitt incompatible colours at different control voltages. Introduction: In my study I nominate taken quaternary semiconductor device InAsSbP as p-type and n-type and InAs as lively story for DH-LED and InAsSbP as p-type and InAs as n-type and as progressive seam for SH-LED. In this study 1?m InAs active piece grown between 3?m InAsSbP works by liquifi ed phase epitaxy (LPE). Theoretically Heterojunctions are organize to confine newsboy recombination. So optical o/p power should be greater in case of DH-LED repayable to presence of devil Heterojunctions. But practically optical o/p power is greater in case of SH-LED. at that place are many another(prenominal) factors causing this reduction in optical o/p power. 1)Larger refractive index of InAs (>3.5) than InAsSbP.

This causes Total intrinsic reprehension (TIR) in case of DH-LED. Due to TIR generated photons are reflected cover version to InAs active region, which reduces optical o/p power. 2)Lattice mis matching-DH-LED formed by LPE. In this proc! ess fretwork not matched perfectly. Due to which some defects such as point, surface and volume defects occurred which causes non-radiative recombinations. These problems can be solved, here some solutions given 1)By reducing width of InAsSbP layer which improves optical o/p power but not as in case of SH-LED. 2)Careful about lattice matching during fabrication process because lattice of both semiconductor should be matched.If you want to get a full essay, enjoin it on our website: BestEssayCheap.com

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